The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Oct. 09, 2014
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Byoung-Chan Oh, Icheon-Si, KR;

Dong-Keun Kim, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 29/00 (2006.01); G11C 29/12 (2006.01); G11C 29/48 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); G11C 11/1697 (2013.01); G11C 29/1201 (2013.01); G11C 29/48 (2013.01); G11C 29/84 (2013.01); G11C 2029/5006 (2013.01);
Abstract

In an electronic device including a semiconductor memory, the semiconductor memory may include a unit storage cell including a variable resistor having a resistance value that is changed according to current flowing through both terminals of the variable resistor and a selection element that is electrically coupled to one terminal of the variable resistor, a unit current generation section that generates the current flowing through both terminals by using predetermined voltage according to a polarity of current data as compared with existing data, and a pad that receives the predetermined voltage from an exterior and allows the current flowing through both terminals to be measured from an exterior.


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