The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

May. 20, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Hwansoo Suh, Gunpo-si, KR;

Insu Jeon, Incheon, KR;

Min-woo Kim, Suwon-si, KR;

Young-jae Song, Suwon-si, KR;

Min Wang, Suwon-si, KR;

Qinke Wu, Suwon-si, KR;

Sung-joo Lee, Suwon-si, KR;

Sung-kyu Jang, Suwon-si, KR;

Seong-jun Jung, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 27/22 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 2213/35 (2013.01); Y10T 428/30 (2015.01);
Abstract

Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.


Find Patent Forward Citations

Loading…