The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Sep. 10, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventor:

Fumiyoshi Matsuoka, Kawasaki Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 7/12 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 11/16 (2013.01); G11C 11/1655 (2013.01); G11C 11/1675 (2013.01); G11C 13/0026 (2013.01); G11C 13/0069 (2013.01); G11C 2213/79 (2013.01);
Abstract

According to one embodiment, a memory device includes memory cells including storage elements, each storing information based on a change of resistance, word lines, first bit lines, second bit lines, column selection transistors connected to the first bit lines, and precharge transistors connected to the first bit lines. At least two of the precharge transistors are selected by a common control signal and apply a precharge voltage to at least two of the corresponding first bit lines before writing information to a selected memory cell, and the precharge voltage is the same as a voltage to be applied to at least two of the second bit lines paired with the at least two of the first bit lines.


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