The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Sep. 16, 2015
Applicants:

Eun-jin Yun, Seoul, KR;

Bogeun Kim, Suwon-si, KR;

Inventors:

Eun-Jin Yun, Seoul, KR;

Bogeun Kim, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/34 (2006.01); G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/0655 (2013.01); G06F 3/0688 (2013.01); G11C 11/005 (2013.01); G11C 11/5628 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 16/10 (2013.01); G11C 11/16 (2013.01); G11C 13/0002 (2013.01);
Abstract

A storage device includes a variable resistance memory, a flash memory and a controller. The flash memory includes a plurality of memory cells connected to a plurality of word lines. The controller is configured to receive data from an external device and program the received data in the variable resistance memory or the flash memory according to a quantity of data to be programmed in the flash memory. Further, the controller is configured to read from the variable resistance memory and program the read data in the flash memory, when the quantity of data accumulated in the variable resistance memory corresponds to a super page of data.


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