The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Jan. 22, 2015
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Akihiko Ebina, Fujimi-machi, JP;
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B81B 7/00 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0041 (2013.01); B81B 3/0021 (2013.01); B81C 1/00293 (2013.01); B81B 2201/0271 (2013.01); B81B 2203/04 (2013.01); B81B 2207/015 (2013.01); B81B 2207/095 (2013.01); B81C 2203/0136 (2013.01); B81C 2203/0778 (2013.01);
Abstract
A MEMS device is provided in which, in order to suppress generation of a gas from an inner wall of a space in which a MEMS portion is disposed, the MEMS portion is disposed in a space constituted by at least a silicon nitride film and a silicon film, the silicon film has a first hole, the first hole is filled with a metal film or a metal silicide, and an airtight structure is formed by the metal film or the metal silicide, the silicon nitride film, and the silicon film.