The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Sep. 27, 2013
Applicant:

Dainippon Screen Mfg. Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Taiki Hinode, Kyoto, JP;

Akio Hashizume, Kyoto, JP;

Takashi Ota, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/311 (2006.01); C09K 13/04 (2006.01); C09K 5/14 (2006.01); B08B 7/00 (2006.01); H01L 21/4757 (2006.01); C11D 3/37 (2006.01); C11D 7/08 (2006.01); C11D 11/00 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
B08B 7/0071 (2013.01); C09K 5/14 (2013.01); C09K 13/04 (2013.01); C11D 3/373 (2013.01); C11D 7/08 (2013.01); C11D 11/0041 (2013.01); C11D 11/0047 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/47573 (2013.01); H01L 21/6708 (2013.01); H01L 21/67051 (2013.01); H01L 21/67109 (2013.01); H01L 21/68742 (2013.01);
Abstract

The inventive substrate treatment apparatus includes a spin chuck which horizontally holds and rotates a wafer; a heater which is disposed in opposed relation to a lower surface of the wafer held by the spin chuck and heats the wafer from a lower side; a phosphoric acid nozzle which spouts a phosphoric acid aqueous solution to a front surface (upper surface) of the wafer held by the spin chuck; and a suspension liquid nozzle which spouts a silicon suspension liquid to the front surface of the wafer held by the spin chuck. The wafer is maintained at a higher temperature on the order of 300° C. and, in this state, a liquid mixture of the phosphoric acid aqueous solution and the silicon suspension liquid is supplied to the front surface of the wafer.


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