The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Feb. 20, 2009
Applicants:
Kazuyuki Ono, Anjo, JP;
Tomofumi Maekawa, Osaka, JP;
Inventors:
Kazuyuki Ono, Anjo, JP;
Tomofumi Maekawa, Osaka, JP;
Assignee:
OMRON Corporation, Kyoto-shi, Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H04R 31/00 (2006.01); B81C 3/00 (2006.01); H01L 23/552 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H04R 31/006 (2013.01); B81C 3/001 (2013.01); H01L 23/552 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0392 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 2224/2731 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83444 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83855 (2013.01); H01L 2224/83862 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/10158 (2013.01); H01L 2924/164 (2013.01); H01L 2924/16152 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01);
Abstract
A semiconductor device has a semiconductor element having a base, a cavity having a polygonal horizontal cross-section penetrating vertically through the base, a diaphragm arranged on the base to cover the cavity, and a substrate formed with a die bonding pad. A lower surface of the semiconductor element is adhered on the die bonding pad with a die bonding resin. The die bonding pad is formed so as not to contact a lower end of a valley section formed by an intersection of wall surfaces of an inner peripheral surface of the cavity of the semiconductor element.