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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9363609 B1

PDFFull Text
Date of Patent:
Jun. 07, 2016

Filed:

Oct. 02, 2013

Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Wolfgang Friza, Villach, AT;

Thomas Grille, Villach, AT;

Klaus Muemmler, Arriach, AT;

Guenter Ziegler, Villach, AT;

Carsten Ahrens, Pettendorf, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Victor A Mandala

Assistant Examiner:

Quovaunda V Jefferson

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H04R 23/00 (2006.01); B81C 1/00 (2006.01); G01L 9/00 (2006.01); H04R 19/00 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
H04R 23/00 (2013.01); B81C 1/00047 (2013.01); B81C 1/00936 (2013.01); G01L 9/0042 (2013.01); H04R 19/005 (2013.01); H04R 31/006 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/0315 (2013.01); B81C 2201/0109 (2013.01);
Abstract

Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.

Find Patent Forward Citations

Friza, Wolfgang. (2016). Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same (U.S. Patent No. 9363609). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9363609

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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