The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 07, 2015
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Samsung Electronics Co., Ltd, , KR;
Abstract
A first and second hybrid envelope detector and full-wave rectifier is provided. The first hybrid envelope detector and full-wave rectifier includes a first P-channel Field Effect Transistor (PFET); a second PFET; a first N-channel Field Effect Transistor (NFET); a second NFET; a third NFET; a fourth NFET; a fifth NFET; a controller; a variable transistor; and a variable capacitor. The second hybrid envelope detector and full-wave rectifier includes a first N-channel Field Effect Transistor (NFET); a second NFET; a first P-channel Field Effect Transistor (PFET); a second PFET; a third PFET; a fourth PFET; a fifth PFET; a controller; a variable transistor; and a variable capacitor.