The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 30, 2005
Applicants:
Akihiko Kikuchi, Tokyo, JP;
Katsumi Kishino, Tokyo, JP;
Inventors:
Akihiko Kikuchi, Tokyo, JP;
Katsumi Kishino, Tokyo, JP;
Assignee:
SOPHIA SCHOOL CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01S 5/183 (2006.01); B82Y 20/00 (2011.01); C30B 25/02 (2006.01); C30B 29/16 (2006.01); C30B 29/40 (2006.01); C30B 29/60 (2006.01); C30B 23/00 (2006.01); H01L 21/02 (2006.01); H01L 33/08 (2010.01); H01S 5/02 (2006.01); H01S 5/04 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01S 5/183 (2013.01); B82Y 20/00 (2013.01); C30B 23/002 (2013.01); C30B 25/02 (2013.01); C30B 29/16 (2013.01); C30B 29/403 (2013.01); C30B 29/605 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02505 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02603 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/08 (2013.01); H01L 33/18 (2013.01); H01S 5/021 (2013.01); H01S 5/041 (2013.01); H01S 5/3202 (2013.01); H01S 5/3412 (2013.01); H01S 5/34333 (2013.01);
Abstract
A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.