The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Nov. 28, 2014
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Seong Jae Kim, Seoul, KR;
Assignee:
LG Innotek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01);
Abstract
A light emitting diode includes a first conductive type semiconductor layer; at least one InGaN layer (0<x<0.2) on the first conductive type semiconductor layer; an active layer directly on the at least one InGaN layer(0<x<0.2); a second conductive type semiconductor layer on the active layer; and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer. At least one period of the active layer includes at least three layers including an InGaN and a GaN. The second conductive type semiconductor layer has a thickness of 750Ř1500Å.