The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 20, 2014
Seoul Viosys Co., Ltd., Ansan-si, KR;
Chang Yeon Kim, Ansan-si, KR;
Dae Sung Cho, Ansan-si, KR;
Ki Bum Nam, Ansan-si, KR;
Young Wug Kim, Ansan-si, KR;
Jong Kyun You, Ansan-si, KR;
Kenji Shimoyama, Ushiku, JP;
Takahide Joichi, Ushiku, JP;
Kaori Kurihara, Ushiku, JP;
SEOUL VIOSYS CO., LTD., Ansan-si, KR;
Abstract
Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.