The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Oct. 07, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;

Inventors:

Jong Hyun Lee, Seoul, KR;

Sang Heon Han, Suwon-si, KR;

Suk Ho Yoon, Seoul, KR;

Jae Sung Hyun, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 29/15 (2006.01); H01S 5/20 (2006.01); H01S 5/34 (2006.01); H01L 33/04 (2010.01); H01L 33/14 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 29/15 (2013.01); H01L 33/02 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01S 5/20 (2013.01); H01S 5/34 (2013.01);
Abstract

There is provided a semiconductor light emitting device. The device includes an n-type semiconductor layer, and a p-type semiconductor layer. The p-type semiconductor layer includes a plurality of first layers and second layers, each containing a p-type impurity and are alternately stacked. The impurity concentrations of the plurality of first layers increase in a direction away from the n-type semiconductor layer. An active layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer.


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