The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Sep. 20, 2013
Sanyo Electric Co., Ltd., Osaka, JP;
Ryo Goto, Hyogo, JP;
Satoru Shimada, Hyogo, JP;
Masato Shigematsu, Osaka, JP;
Hitoshi Sakata, Osaka, JP;
Daisuke Ide, Hyogo, JP;
Abstract
This photoelectric conversion device () is provided with: an n-type monocrystalline silicon substrate (); an IN layer () and an IP layer () formed on the back surface of the n-type monocrystalline silicon substrate (); an n-side electrode () containing an n-side underlayer (), an n-side primary conductive layer (), and an n-side protective layer (); and a p-side electrode () containing a p-side underlayer (), a p-side primary conductive layer (), and a p-side protective layer (). The n-side primary conductive layer () is formed in a manner so as not to cover the lateral surface of the n-side underlayer (), and is covered at the lateral surface by the n-side protective layer (). The p-side electrode () is formed in such a manner the lateral surface of the p-side underlayer () is not covered, and the lateral surface is covered by the p-side protective layer ().