The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 14, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventor:
Han-jin Lim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/41 (2006.01); H01L 29/92 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/94 (2013.01); H01L 27/10805 (2013.01); H01L 27/10808 (2013.01); H01L 27/10814 (2013.01); H01L 27/10817 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 28/91 (2013.01); H01L 29/41 (2013.01); H01L 29/92 (2013.01); H01L 29/945 (2013.01);
Abstract
Provided is a semiconductor device and a method for fabricating the same. The semiconductor device includes an interlayer insulating layer formed on a semiconductor substrate, a metal contact plug penetrating the interlayer insulating layer, a cylindrical lower electrode formed on the metal contact plug and including a first metal and a trench, a supporter formed in the trench and including a second metal that is different from the first metal, a dielectric layer formed on the lower electrode and the supporter and an upper electrode formed on the dielectric layer.