The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Apr. 12, 2013
Kenichi Okazaki, Tochigi, JP;
Masatoshi Yokoyama, Tochigi, JP;
Masayuki Sakakura, Kanagawa, JP;
Yukinori Shima, Gunma, JP;
Yosuke Kanzaki, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Takuya Matsuo, Osaka, JP;
Yoshitaka Yamamoto, Nara, JP;
Kenichi Okazaki, Tochigi, JP;
Masatoshi Yokoyama, Tochigi, JP;
Masayuki Sakakura, Kanagawa, JP;
Yukinori Shima, Gunma, JP;
Yosuke Kanzaki, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Takuya Matsuo, Osaka, JP;
Yoshitaka Yamamoto, Nara, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode, a gate insulating filmformed over the gate electrode, an oxide semiconductor filmover the gate insulating film, and a source electrodeand a drain electrodeformed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.