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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9362401 B1

PDFFull Text
Date of Patent:
Jun. 07, 2016

Filed:

Jun. 08, 2015

Semiconductor device

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, JP;

Inventors:

Toshiyuki Takewaki, Kawasaki, JP;

Hironobu Miyamoto, Kawasaki, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Nathan Ha

Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 27/0207 (2013.01); H01L 27/0605 (2013.01); H01L 27/088 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/4236 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/41758 (2013.01); H01L 29/4966 (2013.01); H01L 29/66477 (2013.01); H01L 29/80 (2013.01);
Abstract

A semiconductor device includes a substrate, a buffer layer provided on the substrate, a channel layer provided on the buffer layer, an electron supply layer provided on the channel layer, a first contact hole provided on the electron supply layer, a source electrode that is formed within the first contact hole, and electrically connected to the electron supply layer, a second contact hole provided on the electron supply layer, a drain electrode that is formed within the second contact hole, and electrically connected to the electron supply layer, a gate electrode provided between the source electrode and the drain electrode, a second insulating film that is formed to cover the gate electrode, a strain relaxation film that is formed over the second insulating film above the gate electrode, a third insulating film that is formed to cover the source electrode, the drain electrode, and the strain relaxation film, and an organic film that is formed over the third insulating film.

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