The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 11, 2011
Applicants:
Marco A. Zuniga, Palo Alto, CA (US);
Craig Cassella, Fremont, CA (US);
Inventors:
Marco A. Zuniga, Palo Alto, CA (US);
Craig Cassella, Fremont, CA (US);
Assignee:
Volterra Semiconductor LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66901 (2013.01);
Abstract
A method for testing an LDMOS transistor by measuring leakage current between the source and drain in the presence of a bias voltage. The leakage current is indicative of defects in the structure of the transistor.