The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Dec. 03, 2014
Tzu-cheng Kao, Hsinchu, TW;
Jian-hsing Lee, Puzi, TW;
Jin-lian Su, Kaohsiuna, TW;
Huan-ping Chu, Hsinchu, TW;
Hung-der Su, Pingzhen, TW;
Tzu-Cheng Kao, Hsinchu, TW;
Jian-Hsing Lee, Puzi, TW;
Jin-Lian Su, Kaohsiuna, TW;
Huan-Ping Chu, Hsinchu, TW;
Hung-Der Su, Pingzhen, TW;
Richtek Technology Corporation, Chupei, Hsin-Chu, TW;
Abstract
The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated.