The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Jul. 09, 2013
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a first silicon carbide semiconductor layer; a p-type first impurity region provided in the first silicon carbide semiconductor layer; and a first ohmic electrode forming ohmic contact with the p-type first impurity region. The first ohmic electrode is a silicon alloy containing nitrogen, an average concentration of nitrogen in the first ohmic electrode is higher than or equal to one half of an average concentration of nitrogen in the first impurity region, and an average concentration of a p-type impurity in a portion of the first ohmic electrode except a portion of the first ohmic electrode within 50 nm from an interface between the first ohmic electrode and the first impurity region is equal to or lower than 3.0×10cm.