The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Apr. 08, 2015
Applicants:

Jaegoo Lee, Suwon-si, KR;

Youngwoo Park, Seoul, KR;

Jaeduk Lee, Seongnam-si, KR;

Inventors:

Jaegoo Lee, Suwon-si, KR;

Youngwoo Park, Seoul, KR;

Jaeduk Lee, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/28282 (2013.01); H01L 21/28518 (2013.01); H01L 21/76877 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01);
Abstract

Semiconductor devices are provided including an active pillar protruding from a substrate; a first gate electrode and a second gate electrode adjacent to a sidewall of the active pillar and vertically overlapping with each other, the first and second gate electrodes being insulated from each other; a first intergate insulating layer covering a first surface of the first gate electrode; and a second intergate insulating layer covering a second surface, opposite the first surface, of the second gate electrode and spaced apart from the first intergate insulating layer. The first intergate insulating layer and the second intergate insulating layer define an air gap therebetween.


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