The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Jul. 12, 2012
Applicants:

Atsushi Kurokawa, Kanagawa, JP;

Shinya Osakabe, Kanagawa, JP;

Inventors:

Atsushi Kurokawa, Kanagawa, JP;

Shinya Osakabe, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 21/8252 (2006.01); H01L 23/522 (2006.01); H01L 27/082 (2006.01); H01L 27/085 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/8252 (2013.01); H01L 23/5223 (2013.01); H01L 27/0605 (2013.01); H01L 27/085 (2013.01); H01L 27/0823 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In a high-frequency circuit, it is necessary to provide galvanic blocking between active elements such as transistors and between an active element and an external terminal, and thus MIM capacitors or the like are used frequently. A MIM capacitor coupled to an external terminal is easily affected by static electricity from outside and causes a problem of electro-static breakdown or the like. In a MIM capacitor formed over a semi-insulating compound semiconductor substrate, a first electrode thereof is coupled to an external pad and to the semi-insulating compound semiconductor substrate, and a second electrode thereof is coupled to the semi-insulating compound semiconductor substrate.


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