The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Jul. 23, 2015
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Shintaro Yamamichi, Kanagawa, JP;

Manabu Okamoto, Kanagawa, JP;

Hirokazu Honda, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/04 (2006.01); H01L 23/34 (2006.01); H01L 23/52 (2006.01); H01L 21/44 (2006.01); H01L 25/18 (2006.01); H01L 23/498 (2006.01); H01L 23/48 (2006.01); H01L 23/31 (2006.01); H01L 23/50 (2006.01); H01L 21/56 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 23/12 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 21/563 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/49838 (2013.01); H01L 23/50 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/12 (2013.01); H01L 23/367 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06555 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/181 (2013.01); H01L 2924/351 (2013.01);
Abstract

This invention prevents a substrate of a semiconductor chip that has through-silicon vias collectively arranged in a specific area thereof from becoming cracked. When a direction in parallel with a long side of a first semiconductor chip is defined as a row direction and a direction perpendicular to the long side of the first semiconductor chip is defined as a column direction, each one of the first through-silicon vias is arranged on any one of grid points arranged in m rows and n columns (m>n). In addition, as viewed in a cross section taken along a short side of the first semiconductor chip, the center of a through-silicon via area, which is defined by coupling the outermost grid points arranged in m rows and n columns, is off center of the short side of the first semiconductor chip in a first direction.


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