The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Jul. 22, 2013
Applicant:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, Ibaraki, JP;

Inventors:

Takeshi Tokuyama, Tokyo, JP;

Kinya Nakatsu, Tokyo, JP;

Akira Mima, Tokyo, JP;

Yukio Hattori, Tokyo, JP;

Toshiya Satoh, Hitachinaka, JP;

Assignee:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 25/18 (2006.01); H01L 25/07 (2006.01); H01L 23/495 (2006.01); H01L 23/04 (2006.01); H01L 23/31 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 23/00 (2006.01); H02M 7/00 (2006.01); H02M 7/5387 (2007.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 23/04 (2013.01); H01L 23/3107 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/36 (2013.01); H01L 24/40 (2013.01); H01L 25/07 (2013.01); H01L 25/072 (2013.01); H01L 29/7393 (2013.01); H01L 29/861 (2013.01); H01L 2224/40137 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H02M 7/003 (2013.01); H02M 7/5387 (2013.01); H02M 2001/0054 (2013.01); Y02B 70/1491 (2013.01);
Abstract

The purpose of the present invention is to reduce the wiring inductance of a power semiconductor module. It comprises a first power semiconductor device, a second power semiconductor device, a first conductor unit which is opposed to the first power semi conductor device, a second conductor unit which is opposed to the first conductor unit across the first power semiconductor device, a third conductor unit which is opposed to the second power semiconductor device, a fourth conductor unit which is opposed to the third conductor unit across the second power semiconductor device, a first intermediate conductor unit which extends from the first conductor unit, a second intermediate conductor unit which extends from the fourth conductor unit and, a positive electrode side first terminal, and a positive electrode side second terminal which project from the first intermediate conductor unit, and a negative electrode side first terminal and a negative electrode side second terminal which project from the second intermediate conductor unit. The negative electrode side first terminal is arranged in a position adjacent to the positive electrode side first terminal. The negative electrode side second terminal is arranged in a position adjacent to the positive electrode side second terminal.


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