The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9362246 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 07, 2016

Filed:

Jun. 16, 2015
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Haruki Ito, Chino, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/485 (2006.01); H01L 21/48 (2006.01); G02F 1/1345 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); G02F 1/13458 (2013.01); H01L 21/4846 (2013.01); H01L 23/485 (2013.01); H01L 24/02 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0236 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/114 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1161 (2013.01); H01L 2224/11622 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13008 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/1319 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13666 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.


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