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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9362205 B1

PDFFull Text
Date of Patent:
Jun. 07, 2016

Filed:

Sep. 15, 2011

Circuit device

Applicants:

Takashi Shibasaki, Gunma, JP;

Hidefumi Saito, Isesaki, JP;

Takahisa Makino, Kiryu, JP;

Masanori Shimizu, Ashikaga, JP;

Daisuke Sasaki, Ota, JP;

Inventors:

Takashi Shibasaki, Gunma, JP;

Hidefumi Saito, Isesaki, JP;

Takahisa Makino, Kiryu, JP;

Masanori Shimizu, Ashikaga, JP;

Daisuke Sasaki, Ota, JP;

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);

Attorney:

Robert F. Hightower

Primary Examiner:

Jenny L Wagner

Assistant Examiner:

Michael P McFadden

Int. Cl.
CPC ...
H01L 23/482 (2006.01); H01L 23/049 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01); H01L 25/07 (2006.01); H02M 7/537 (2006.01); H01L 31/02 (2006.01); H01L 23/24 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/482 (2013.01); H01L 23/049 (2013.01); H01L 23/3735 (2013.01); H01L 23/49811 (2013.01); H01L 23/49833 (2013.01); H01L 23/49844 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 25/072 (2013.01); H01L 31/02021 (2013.01); H02M 7/537 (2013.01); H01L 23/24 (2013.01); H01L 23/295 (2013.01); H01L 23/3107 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/48699 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/30107 (2013.01); Y02E 10/50 (2013.01);
Abstract

A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. A lead () and lead () though which high current passes are disposed superimposed on the upper surface of a circuit board (). Also, a plurality of ceramic substrates (A-F) are affixed to the circuit board (), and transistors, diodes, or resistors are mounted to the upper surface of the ceramic substrates. Furthermore, the circuit elements such as the transistors or diodes are connected to the lead () or the other lead () via fine metal wires.

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