The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

May. 09, 2012
Applicants:

Shin AE Jun, Seongnam-si, KR;

Eun Joo Jang, Seoul, KR;

In-taek Han, Suwon-si, KR;

Hyun A. Kang, Suwon-si, KR;

Hyo Sook Jang, Yongin-si, KR;

Sang Eui Lee, Seoul, KR;

Soo-kyung Kwon, Seoul, KR;

Inventors:

Shin Ae Jun, Seongnam-si, KR;

Eun Joo Jang, Seoul, KR;

In-Taek Han, Suwon-si, KR;

Hyun A. Kang, Suwon-si, KR;

Hyo Sook Jang, Yongin-si, KR;

Sang Eui Lee, Seoul, KR;

Soo-Kyung Kwon, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/52 (2010.01); H01L 23/08 (2006.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 23/08 (2013.01); H01L 33/505 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/12044 (2013.01);
Abstract

A case including a case main body, a matrix including a semiconductor nanocrystal, the matrix disposed in the case main body, and a sealant disposed on the case main body, wherein the sealant has a gas permeability of about 1 cubic centimeter at standard temperature and pressure per centimeter per meter squared per day per atmosphere or less and a tensile strength of about 5 megaPascals or more, and wherein the semiconductor nanocrystal is a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element, a Group IV element, a Group IV compound, or a combination thereof.


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