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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9362171 B1

PDFFull Text
Date of Patent:
Jun. 07, 2016

Filed:

Dec. 26, 2013

Through via contacts with insulated substrate

Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Shunqiang Gong, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Wei Liu, Singapore, SG;

Assignee:

GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;

Attorney:

Horizon IP Pte. Ltd.

Primary Examiner:

Robert Huber

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/486 (2013.01); H01L 21/6835 (2013.01); H01L 21/76831 (2013.01); H01L 21/76871 (2013.01); H01L 21/76877 (2013.01); H01L 21/76892 (2013.01); H01L 23/522 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 25/0657 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10271 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01);
Abstract

Device and a method of forming a device are disclosed. The method includes providing a crystalline-on-insulator (COI) substrate. The COI substrate includes at least a base substrate over a buried insulator layer. Through via (TV) contacts are formed within the substrate. The TV contact extends from a top surface of the base substrate to within the buried insulator layer. Upper interconnect levels are formed over the top surface of the base substrate. A lower redistribution (RDL) is formed over a bottom surface of the base substrate. The buried insulator layer corresponds to a first RDL dielectric layer of the lower RDL and protects the sidewalls of the TV contacts.

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