The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Nov. 22, 2011
Applicants:
Hyun Jae Kim, Seoul, KR;
Hyun Soo Shin, Seoul, KR;
You Seung Rim, Seoul, KR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/58 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02628 (2013.01); H01L 29/24 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract
Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.