The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Aug. 19, 2011
Applicants:
Stephan Wieber, Karlsruhe, DE;
Matthias Patz, Bottrop, DE;
Harald Stueger, Graz, AT;
Jasmin Lehmkuhl, Haltern am See, DE;
Inventors:
Stephan Wieber, Karlsruhe, DE;
Matthias Patz, Bottrop, DE;
Harald Stueger, Graz, AT;
Jasmin Lehmkuhl, Haltern am See, DE;
Assignee:
Evonik Degussa GmbH, Essen, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); C23C 18/12 (2006.01); C23C 18/14 (2006.01); H01L 21/228 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); C23C 18/122 (2013.01); C23C 18/1204 (2013.01); C23C 18/1225 (2013.01); C23C 18/14 (2013.01); H01L 21/0237 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/02628 (2013.01); H01L 21/228 (2013.01); H01L 29/16 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract
The invention relates to a process for producing p-doped silicon layers, especially those silicon layers which are produced from liquid silane-containing formulations. The invention further relates to a substrate coated with a p-doped silicon layer. The invention additionally relates to the use of particular dopants based on boron compounds for p-doping of a silicon layer.