The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Mar. 25, 2013
Applicant:
Cold Brick Semiconductor, Inc., Cupertino, CA (US);
Inventor:
Gajendra Prasad Singh, Sunnyvale, CA (US);
Assignee:
COLD BRICK SEMICONDUCTOR, INC., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 5/14 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
G11C 5/14 (2013.01); H03K 17/161 (2013.01);
Abstract
A semiconductor device with reduced leakage current and a method of manufacturing these reduced leakage current semiconductor devices are disclosed. The reduced leakage current semiconductor devices may be used for both static circuits and dynamic circuits. The reduced leakage current semiconductor devices reduce leakage current in the device when the node is not transitioning which occurs more than 95% of the time.
Singh, Gajendra. (2016). Semiconductor device with reduced leakage current and method for manufacture of the same (U.S. Patent No. 9361950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9361950
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile