The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Apr. 20, 2015
Headway Technologies, Inc., Milpitas, CA (US);
Tdk Corporation, Tokyo, JP;
Yue Liu, Fremont, CA (US);
Atsushi Yamaguchi, Tokyo, JP;
Yuhui Tang, Milpitas, CA (US);
Jiun-Ting Lee, Sunnyvale, CA (US);
Yaguang Wei, Pleasanton, CA (US);
Xiaomin Liu, Fremont, CA (US);
Hideyuki Ukita, Tokyo, JP;
Moris Dovek, San Jose, CA (US);
Michitaka Nishiyama, Tokyo, JP;
Headway Technologies, Inc., Milpitas, CA (US);
TDK Corporation, Tokyo, JP;
Abstract
A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a side gap and a 10-16 kG magnetic layer in the side shields, and between a 16-19 kG magnetic layer and the leading gap in the leading shield to improve Hy_grad and Hy_grad_x while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of ≦0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of ≦0.5 micron. First and second sides may form a continuous curve or the a double tapered design where first and second sides have different angles with respect to a center plane. The side shield design described herein is especially beneficial for side gaps of 20-60 nm.