The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Dec. 19, 2014
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
John E. Bowers, Santa Barbara, CA (US);
Jock Bovington, La Jolla, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/13 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/131 (2013.01); G02B 6/12002 (2013.01);
Abstract
A method of fabricating a heterogeneous semiconductor wafer includes depositing a III-V type semiconductor epitaxial layer on a first wafer having a semiconductor substrate. The first wafer is then bonded to a second wafer having a patterned silicon layer formed on a semiconductor substrate, wherein the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer of the second wafer. The semiconductor substrate associated with the first wafer is removed to expose the III-V type semiconductor epitaxial layer.