The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Nov. 26, 2014
Applicant:

Novatek Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Hsiang-Chi Li, Hsinchu, TW;

Assignee:

NOVATEK Microelectronics Corp., Hsinchu Science Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H03K 3/356 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 3/356104 (2013.01); H03K 19/018521 (2013.01);
Abstract

A level shifter for high-speed level shifting includes a first P-channel transistor, comprising a gate coupled to a drain, and a source coupled to a system voltage; a second P-channel transistor, comprising a gate coupled to the gate of the first P-channel transistor, and a source coupled to the system voltage; a first N-channel transistor, comprising a drain coupled to the drain of the first P-channel transistor, and a source coupled to a ground level; and a second N-channel transistor, comprising a drain coupled to a drain of the second P-channel transistor, and a source coupled to the ground level; wherein the first N-channel transistor and the second N-channel transistor are low-threshold-voltage transistors or native transistors.


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