The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Feb. 21, 2014
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Tsuguki Noma, Kyoto, JP;

Minoru Akutsu, Kyoto, JP;

Yoshito Nishioka, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/343 (2006.01); B82Y 20/00 (2011.01); H01S 5/32 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3436 (2013.01); B82Y 20/00 (2013.01); H01S 5/3202 (2013.01); H01S 5/3434 (2013.01); H01S 5/2031 (2013.01); H01S 5/22 (2013.01); H01S 5/3213 (2013.01); H01S 5/3404 (2013.01); H01S 2301/145 (2013.01); H01S 2301/173 (2013.01);
Abstract

A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (AlGa)InP cladding layer and a p-type (AlGa)InP cladding layer; an n-side AlGaAs guiding layer and a p-side AlGaAs guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlGaAsPlayer and a barrier layer including an AlGaAs layer that are alternatively repetitively stacked for a plurality of periods.


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