The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Oct. 30, 2013
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Takeshi Kawashima, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01S 5/30 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01S 5/18358 (2013.01); B82Y 20/00 (2013.01); H01S 5/18383 (2013.01); H01S 5/3063 (2013.01); H01S 5/34333 (2013.01); H01S 5/18308 (2013.01); H01S 5/18341 (2013.01); H01S 5/18369 (2013.01); H01S 2301/173 (2013.01);
Abstract

A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector, a plurality of active layers causing a gain by current injection, and an upper reflector are provided on a substrate, includes an n-type spacer layer formed between the lower reflector and an active layer closest to the lower reflector in the plurality of active layers, a p-type spacer layer formed between the upper reflector and an active layer closest to the upper reflector in the plurality of active layers, and an intermediate layer arranged between the plurality of active layers. The intermediate layer is configured from an Mg-doped layer including at least Mg, and a nitride semiconductor layer including In, and the Mg-doped layer and the nitride semiconductor layer including In are provided in that order from a side of the substrate.


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