The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Sep. 13, 2011
Applicants:

Jaan Leis, Tartu, EE;

Mati Arulepp, Tartu, EE;

Inventors:

Jaan Leis, Tartu, EE;

Mati Arulepp, Tartu, EE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/02 (2006.01); H01M 4/1395 (2010.01); C01B 31/36 (2006.01); C04B 35/628 (2006.01); H01M 4/36 (2006.01); H01M 4/587 (2010.01); H01B 1/04 (2006.01); H01M 10/0525 (2010.01);
U.S. Cl.
CPC ...
H01M 4/1395 (2013.01); C01B 31/36 (2013.01); C04B 35/62834 (2013.01); C04B 35/62839 (2013.01); C04B 35/62892 (2013.01); H01M 4/364 (2013.01); H01M 4/587 (2013.01); C04B 2235/428 (2013.01); H01B 1/04 (2013.01); H01M 10/0525 (2013.01);
Abstract

The present invention concerns a method of manufacture of the homodispersed composite of the synthetic carbon material derived from carbide and silicon where the powder of the carbon material is first dispersed mechanically with the powder of silicon to homodispersed mixture, then the homodispersed mixture of the carbon material and silicon is sintered in an inert environment at a temperature between 1200 to 1500° C. to synthetic homodispersed composite of the silicon carbide and silicon. The homodispersed composite of the silicon carbide and silicon is heated in an inert environment at a temperature between 800 to 1100° C. and then the homodispersed composite of the silicon carbide and silicon is chlorinated at a temperature from 800 to 100° C.


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