The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Sep. 23, 2015
Wuxi China Resources Huajing Microelectronics Co., Ltd., Wuxi, Jiangsu, CN;
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD., Jiangsu, CN;
Abstract
A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (); an epitaxial layer at one side of the substrate () and comprising an N-type layer (), a P-type layer (), and an active layer () between the N-type layer () and the P-type layer (); an N-type electrode (); a P-type electrode (); an adhesive layer (); and a patterned substrate (). The light-emitting diode device further comprises an insulating layer () between the N-type electrode () and the P-type electrode (), the insulating layer () electrically insulating the N-type electrode () and the P-type electrode (). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.