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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9356191 B1

PDFFull Text
Date of Patent:
May. 31, 2016

Filed:

May. 29, 2015

Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same

Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Min Jang, Ansan-si, KR;

Kyu Ho Lee, Ansan-si, KR;

Chang Suk Han, Ansan-si, KR;

Hwa Mok Kim, Ansan-si, KR;

Daewoong Suh, Ansan-si, KR;

Chi Hyun In, Ansan-si, KR;

Jong Hyeon Chae, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:

H.C. Park & Associates, PLC

Primary Examiner:

Marc Armand

Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 29/0657 (2013.01); H01L 33/0079 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/0095 (2013.01);
Abstract

An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.

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