The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Mar. 24, 2014
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Jar-Yu Wu, Hsinchu, TW;

Yu-Ming Kun, Hsinchu, TW;

Chun-Lung Tseng, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); H01L 27/153 (2013.01); H01L 33/385 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches.


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