The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Dec. 29, 2014
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Ki Yon Park, Ansan-si, KR;
Hwa Mok Kim, Ansan-si, KR;
Kyu Ho Lee, Ansan-si, KR;
Sung Hyun Lee, Ansan-si, KR;
Hyung Kyu Kim, Ansan-si, KR;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 31/0304 (2006.01); H01L 31/11 (2006.01); H01L 31/108 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03048 (2013.01); H01L 31/03044 (2013.01); H01L 31/108 (2013.01); H01L 31/11 (2013.01); H01L 31/1848 (2013.01); H01L 31/1856 (2013.01);
Abstract
An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer. The secondary light absorption layer includes a nitride layer having lower band-gap energy than the primary light absorption layer.