The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Jul. 20, 2012
Applicants:

Thierry Coffi Herve Yao, Portland, OR (US);

Gregory James Scott, Inkom, ID (US);

Inventors:

Thierry Coffi Herve Yao, Portland, OR (US);

Gregory James Scott, Inkom, ID (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/115 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7883 (2013.01); G11C 16/0433 (2013.01); G11C 16/14 (2013.01); H01L 27/11558 (2013.01);
Abstract

An electronic device can include a tunnel structure that includes a first electrode, a second electrode, and tunnel dielectric layer disposed between the electrodes. In a particular embodiment, the tunnel structure may or may not include an intermediate doped region that is at the primary surface, abuts a lightly doped region, and has a second conductivity type opposite from and a dopant concentration greater than the lightly doped region. In another embodiment, the electrodes have opposite conductivity types. In a further embodiment, an electrode can be formed from a portion of a substrate or well region, and the other electrode can be formed over such portion of the substrate or well region.


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