The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
May. 24, 2013
Chan-long Shieh, Paradise Valley, AZ (US);
Gang Yu, Santa Barbara, CA (US);
Fatt Foong, Goleta, CA (US);
Juergen Musolf, Santa Barbara, CA (US);
Chan-Long Shieh, Paradise Valley, AZ (US);
Gang Yu, Santa Barbara, CA (US);
Fatt Foong, Goleta, CA (US);
Juergen Musolf, Santa Barbara, CA (US);
CBRITE INC., Goleta, CA (US);
Abstract
A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm/Vs and a carrier concentration in a range of approximately 10cmto approximately 5×10cm. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.