The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jan. 26, 2015
Renesas Electronics Corporation, Kanagawa, JP;
Kosuke Yoshida, Kanagawa, JP;
Tetsuya Nitta, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To provide a semiconductor device capable of suppressing a reduction in breakdown voltage by suppressing a change in dimensions of a double RESURF structure, and a method of manufacturing the same. In the semiconductor device, an upper RESURF region is formed so as to contact with a first buried region on a side of the one main surface within a semiconductor substrate. The semiconductor substrate has a field oxide formed so as to reach the upper RESURF region on the one main surface. The semiconductor substrate includes a second conductivity type body region formed so as to contact with the upper RESURF region on a side of the one main surface and so as to neighbor the field oxide within the semiconductor substrate.