The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Apr. 18, 2014
Epistar Corporation, Hsinchu, TW;
Huga Optotech Inc., Taichung, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor power device, comprising: a substrate; a first semiconductor layer with a first lattice constant formed on the substrate; a first grading layer formed on the first semiconductor layer and comprising a first portion; a second grading layer formed on the first grading layer; a second semiconductor layer with a second lattice constant formed on the second grading layer; a first interlayer formed in the first grading layer and adjacent to the first portion of the first grading layer; and a second interlayer formed in the second grading layer; wherein the first interlayer comprises a first superlattice including a series of AlGaN/AlGaN alternate layers, (x1-y1)≧0.2, and the second interlayer comprises a second superlattice including a series of AlGaN/AlGaN alternate layers, (x2-y2)≧0.2, wherein the average of x1 and y1 is larger than that of x2 and y2.