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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9356116 B1

PDFFull Text
Date of Patent:
May. 31, 2016

Filed:

May. 09, 2013

Power semiconductor device and method of fabricating the same

Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon, KR;

Inventors:

Jaehoon Park, Suwon, KR;

In Hyuk Song, Suwon, KR;

Dong Soo Seo, Suwon, KR;

Kwang Soo Kim, Suwon, KR;

Kee Ju Um, Suwon, KR;

Assignee:

SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon, KR;

Attorney:
Primary Examiner:

David Vu

Assistant Examiner:

Juanita Rhodes

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/768 (2006.01); H01L 29/78 (2006.01); H01L 51/05 (2006.01); H01L 27/08 (2006.01); H01L 27/092 (2006.01); H01L 31/111 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 27/088 (2013.01); H01L 27/0817 (2013.01); H01L 27/0921 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/1079 (2013.01); H01L 29/41733 (2013.01); H01L 29/4232 (2013.01); H01L 29/66325 (2013.01); H01L 29/66333 (2013.01); H01L 29/66477 (2013.01); H01L 29/66484 (2013.01); H01L 29/66954 (2013.01); H01L 29/7393 (2013.01); H01L 29/768 (2013.01); H01L 29/78 (2013.01); H01L 31/111 (2013.01); H01L 31/1113 (2013.01); H01L 51/0512 (2013.01);
Abstract

There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of the drift layer, a first conductive type emitter layer formed in the body layer and formed to be spaced apart from the first gate, a second gate covering upper portions of the body layer and the emitter layer and formed as a flat type gate on the first gate, and a segregation stop layer formed between contact surfaces of the first and second gates with the body layer, the emitter layer, and the drift layer.

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