The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Mar. 17, 2013
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Tomonori Mizushima, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
A method of manufacturing an RC-IGBT provided with an IGBT and an FWD on the same substrate is provided. First, top surface device structures of an IGBT and an FWD are formed on the top surface of a semiconductor substrate. Then, with the side of an IGBT region on the top surface of the semiconductor substrate shielded by a first shielding mask, only an FWD region is irradiated with light ions. Next, with the side of the FWD region on the bottom surface of the semiconductor substrate shielded by a second shielding mask, only the IGBT region is irradiated with light ions. With this, a first lifetime control region-is formed on the collector side Ain the IGBT region A-Aand a second lifetime control region-is formed on the anode side Bof the FWD region B-B