The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Mar. 06, 2015
Applicants:

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Stmicroelectronics SA, Montrouge, FR;

Inventors:

Vincent Fiori, Sassenage, FR;

Sebastien Gallois-Garreignot, Grenoble, FR;

Denis Rideau, Grenoble, FR;

Clement Tavernier, Grenoble, FR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 29/7845 (2013.01);
Abstract

A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the <110> type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.


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