The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Sep. 29, 2014
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Ji Hyung Moon, Seoul, KR;

Sang Youl Lee, Seoul, KR;

Young kyu Jeong, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 21/00 (2006.01); H01L 25/13 (2006.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 33/64 (2010.01); F21K 99/00 (2016.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/48 (2010.01); F21Y 101/02 (2006.01); F21V 29/83 (2015.01);
U.S. Cl.
CPC ...
H01L 25/13 (2013.01); H01L 33/20 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 33/64 (2013.01); F21K 9/13 (2013.01); F21V 29/83 (2015.01); F21Y 2101/02 (2013.01); H01L 33/0079 (2013.01); H01L 33/22 (2013.01); H01L 33/387 (2013.01); H01L 33/486 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer, a second electrode layer disposed beneath the light emitting structure and electrically connected to the second-conductivity-type semiconductor layer, a first electrode layer including a main electrode disposed beneath the second electrode layer, and at least one contact electrode branching from the main electrode and extending through the second electrode layer, the second-conductivity-type semiconductor layer and the active layer, to contact the first-conductivity-type semiconductor layer, and an insulating layer interposed between the first electrode layer and the second electrode layer and between the first electrode layer and the light emitting structure. The first-conductivity-type semiconductor layer includes a first region and a second region having a smaller height than the first region, and the first region overlaps with the contact electrode.


Find Patent Forward Citations

Loading…