The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2016

Filed:

Oct. 31, 2013
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Carsten Schäffer, Annenheim, AT;

Oliver Humbel, Maria Elend, AT;

Mathias Plappert, Villach, AT;

Angelika Koprowski, Klagenfurt, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 23/482 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53219 (2013.01); H01L 21/76846 (2013.01); H01L 23/4824 (2013.01); H01L 29/404 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer.


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